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Ordering number : ENA0464
CPH5862
SANYO Semiconductors
DATA SHEET
CPH5862
Features
* *
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
*
*
DC / DC converter applications. Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] * 2.5V drive. [SBD] * Short reverse recovery time. * Low forward voltage. * Low reverse current.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1000mm20.8mm) 1unit 20 10 2 8 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : YQ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PE TI IM TCC-00000873 No. A0464-1/5
CPH5862
Continued from preceding page.
Parameter [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 700 5 --55 to +125 --55 to +125 V V mA A C C Symbol Conditions Ratings Unit
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=300A IF=700mA VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 30 0.55 80 25 10 V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0V 20 1 10 0.4 1.6 2.7 100 130 190 40 25 9 25 25 18 2.7 0.6 0.6 0.87 1.2 130 180 1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions
unit : mm (typ) 7017A-005
2.9 0.15
Electrical Connection
5
4
3
5
4
3
0.2
2.8
1.6
0.05
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode
1 2
0.6
Top view
0.6
1
0.95
2
0.4
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.9
0.2
No. A0464-2/5
CPH5862
Switching Time Test Circuit
[MOSFET]
4V 0V VIN ID=1A RL=10 VOUT VIN VDD=10V
trr Test Circuit
[SBD]
Duty10%
100mA
D
PW=10s D.C.1%
50 10s
100
10
G
--5V
100mA
P.G
50
S
CPH5862
trr
2.0
ID -- VDS
3.0V
2.0 V
[MOSFET]
3.0
ID -- VGS
VDS=10V
[MOSFET]
1.8 1.6
VGS=1.5V
Drain Current, ID -- A
2.5
Drain Current, ID -- A
4.0V
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
2.5 V
2.0
6.0V
1.5
1.0
75 C
Ta =
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.4 0.8 IT02720 Drain-to-Source Voltage, VDS -- V [MOSFET] RDS(on) -- VGS
1.2
--2 5 C
25C
1.6
10mA
2.0 IT02721
Gate-to-Source Voltage, VGS -- V
250
300
RDS(on) -- Ta
[MOSFET]
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
250
200
200
1.0A
150
150
ID=0.5A
100
100
0.5A , I D= 2.5V .0A = VGS .0V, I D=1 =4 VGS
50
50
0 0 1 2 3 4 5 6 7 8 9 10 IT02722 Gate-to-Source Voltage, VGS -- V [MOSFET] yfs -- ID
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01
IT02723
10
IS -- VSD
[MOSFET] VGS=0V
Forward Transfer Admittance, yfs -- S
7 5 3 2
VDS=10V
= Ta
1.0 7 5 3 2 0.01 2 3 5 7 0.1
--2
5C
75
C
Source Current, IS -- A
C 25
2
3
5
7 1.0
2
3
5
0
0.2
0.4
Ta=7 5C 25C --25C
0.6 0.8
1.0
1.2
1.4 IT02725
Drain Current, ID -- A
IT02724
Diode Forward Voltage, VSD -- V
No. A0464-3/5
CPH5862
100 7
SW Time -- ID
VDD=10V VGS=4V
[MOSFET]
1000 7 5
Ciss, Coss, Crss -- VDS
[MOSFET] f=1MHz
Switching Time, SW Time -- ns
5
Ciss, Coss, Crss -- pF
3 2
td(off)
3 2
Ciss
tf
10 7 5 3 2
td(on)
tr
100 7 5 3 2
Coss
Crss
1.0 0.1
10 2 3 5 7 1.0 2 3 5 IT02726 0 5 10 15 20
Drain Current, ID -- A
4
VGS -- Qg
[MOSFET]
2 10 7 5
IT02727 Drain-to-Source Voltage, VDS -- V [MOSFET] ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=2A
Drain Current, ID -- A
3
IDP=8A
ID=2A
DC
PW10s
1m
3 2 1.0 7 5 3 2 0.1 7 5 3 2
10
10
op
ms
s
0m
ati
s
2
er
on
1
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (1000mm20.8mm) 1unit
23 5 7 0.1 23 5 7 1.0 2 3 5 7 10 2 3
0 0 1 2 3 IT02728
0.01 0.01
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT11354
[MOSFET]
Allowable Power Dissipation, PD -- W
1.0 0.9 0.8
M
ou
nte
do
na
ce
ram
0.6
ic
bo
ard
(1
0.4
00
0m
m2 0
0.2
.8m
m)
1u
nit
160 IT11355
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
5 3 2 1.0 7 5 3 2
IF -- VF
[SBD]
5 2 1000
IR -- VR
5C Ta=12
[SBD]
Reverse Current, IR -- A
Forward Current, IF -- A
5 2 100 5 2 10 5 2 1.0 5 2 0.1 0
100C
75C
50C
25C
25 C Ta= 1
0.1 7 5 3 2 0.01 0
25C
0.2
0.4
0.6
0.8
1.0 ID00383
5
10
15
20
25
30
35 ID00384
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
No. A0464-4/5
CPH5862
Average Forward Power Dissipation, PF(AV) -- W
0.8
PF(AV) -- IO
(1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 Rectangular wave
[SBD]
2
C -- VR
[SBD] f=1MHz
Interterminal Capacitance, C -- pF
1.0 ID00385
100 7 5
0.6
(4) (3) (2)
0.4
360
(1)
3 2
0.2
Sine wave
180
10 7 5 1.0 2 3 5 7 10 2 3 5 ID00386
0 0 0.2 0.4 0.6
360 0.8
Average Output Current, IO -- A
6
IFSM -- t
IS
Reverse Voltage, VR -- V
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
5
4
20ms t
3
2
1
0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
ID00387
Note on usage : Since the CPH5862 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice.
PS No. A0464-5/5

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